Temperature dependence of first- and second-order Raman scattering in silicon nanowires

被引：16

作者：

Khachadorian, S. ^{[1
]}

Scheel, H. ^{[1
]}

Colli, A. ^{[2
]}

Vierck, A. ^{[1
]}

Thomsen, C. ^{[1
]}

机构：

[1] Tech Univ Berlin, Inst Festkorperphys, D-1000 Berlin, Germany

[2] Nokia Res Ctr, Cambridge CB3 0FA, England

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2010年 / 247卷 / 11-12期

关键词：

Raman spectroscopy; high-order scattering; silicon nanowires; temperature dependent Raman spectra; SOLAR-CELLS; SPECTRUM; CONFINEMENT; PHONONS;

D O I：

10.1002/pssb.201000704

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The first- and second-order Raman scattering of the silicon nanowires grown without any metal catalyst is studied in the temperature range from 77 to 873 K. The first- and second-order Raman peaks were found to shift and broaden differently with increasing temperature. We show that this is due to the confinement related enhanced anharmonic effects in silicon nanowires. Our measurements also show that both the second-to first-order Raman peak intensity ratio [I(2TA)(int.)/I(1TO)(int.) and I(2TO)(int.)/I(1TO)(int.)] and the Raman relative intensities [I(2TA)(int.)/I(2TO)(int.)] increase with increasing temperature. [GRAPHICS] TEM image of SiNWs. The SiNW are 15 nm in diameter and up to a few microns long. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：3084 / 3088

页数：5

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