Multilayered graphene efficiently formed by mechanical exfoliation for nonlinear saturable absorbers in fiber mode-locked lasers

被引:162
作者
Chang, You Min [1 ]
Kim, Hyungseok [2 ]
Lee, Ju Han [1 ]
Song, Yong-Won [2 ]
机构
[1] Univ Seoul, Sch Elect & Comp Engn, Seoul 130743, South Korea
[2] Korea Inst Sci & Technol, Optoelect Mat Ctr, Seoul 136791, South Korea
关键词
LAYER GRAPHENE; SPECTROSCOPY; FILMS;
D O I
10.1063/1.3521257
中图分类号
O59 [应用物理学];
学科分类号
摘要
An efficiently prepared graphene from a bulk graphite using mechanical exfoliation is experimentally investigated for the first practical application to ultrafast photonics. Overcoming the limitations of the method in its size and atomic layer control, the multilayered graphene guarantees a nonlinear intensity modulation. After confirming its excellent crystal quality and few-layered nanostructure employing Raman analysis and atomic force microscopy the graphene layer is introduced into a fiber laser as an intracavity saturable absorber to realize the passive mode-locking that produces picosecond pulses at the repetition rate of 10.9 MHz. Extinction ratio of the resultant pulsed output is higher than 40 dB. (C) 2010 American Institute of Physics. [doi:10.1063/1.3521257]
引用
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页数:3
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共 16 条
[1]   Atomic-Layer Graphene as a Saturable Absorber for Ultrafast Pulsed Lasers [J].
Bao, Qiaoliang ;
Zhang, Han ;
Wang, Yu ;
Ni, Zhenhua ;
Yan, Yongli ;
Shen, Ze Xiang ;
Loh, Kian Ping ;
Tang, Ding Yuan .
ADVANCED FUNCTIONAL MATERIALS, 2009, 19 (19) :3077-3083
[2]   Quasiparticle dynamics in graphene [J].
Bostwick, Aaron ;
Ohta, Taisuke ;
Seyller, Thomas ;
Horn, Karsten ;
Rotenberg, Eli .
NATURE PHYSICS, 2007, 3 (01) :36-40
[3]   Raman Spectroscopy of Graphene Edges [J].
Casiraghi, C. ;
Hartschuh, A. ;
Qian, H. ;
Piscanec, S. ;
Georgi, C. ;
Fasoli, A. ;
Novoselov, K. S. ;
Basko, D. M. ;
Ferrari, A. C. .
NANO LETTERS, 2009, 9 (04) :1433-1441
[4]   The electronic properties of graphene [J].
Castro Neto, A. H. ;
Guinea, F. ;
Peres, N. M. R. ;
Novoselov, K. S. ;
Geim, A. K. .
REVIEWS OF MODERN PHYSICS, 2009, 81 (01) :109-162
[5]   Effects of Charge Impurities and Laser Energy on Raman Spectra of Graphene [J].
Hulman, Martin ;
Haluska, Miroslav ;
Scalia, Giusy ;
Obergfell, Dirk ;
Roth, Siegmar .
NANO LETTERS, 2008, 8 (11) :3594-3597
[6]   Toward Site-Specific Stamping of Graphene [J].
Li, Dongsheng ;
Windl, Wolfgong ;
Padture, Nitin P. .
ADVANCED MATERIALS, 2009, 21 (12) :1243-+
[7]   Graphene photodetectors for high-speed optical communications [J].
Mueller, Thomas ;
Xia, Fengnian ;
Avouris, Phaedon .
NATURE PHOTONICS, 2010, 4 (05) :297-301
[8]   Graphene thickness determination using reflection and contrast spectroscopy [J].
Ni, Z. H. ;
Wang, H. M. ;
Kasim, J. ;
Fan, H. M. ;
Yu, T. ;
Wu, Y. H. ;
Feng, Y. P. ;
Shen, Z. X. .
NANO LETTERS, 2007, 7 (09) :2758-2763
[9]   Patterned Graphene Electrodes from Solution-Processed Graphite Oxide Films for Organic Field-Effect Transistors [J].
Pang, Shuping ;
Tsao, Hoi Nok ;
Feng, Xinliang ;
Muellen, Klaus .
ADVANCED MATERIALS, 2009, 21 (34) :3488-+
[10]   Large Area, Few-Layer Graphene Films on Arbitrary Substrates by Chemical Vapor Deposition [J].
Reina, Alfonso ;
Jia, Xiaoting ;
Ho, John ;
Nezich, Daniel ;
Son, Hyungbin ;
Bulovic, Vladimir ;
Dresselhaus, Mildred S. ;
Kong, Jing .
NANO LETTERS, 2009, 9 (01) :30-35