Low-noise GaN Schottky diodes on Si(111) by molecular beam epitaxy

被引：17
作者：
Deelman, PW
Bicknell-Tassius, RN
Nikishin, S
Kuryatkov, V
Temkin, H
机构：
[1] CALTECH, Jet Prop Lab, Ctr Space Microelect Technol, Pasadena, CA 91109 USA
[2] Texas Tech Univ, Dept Elect Engn, Lubbock, TX 79409 USA
来源：
APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 15期
关键词：
D O I：
10.1063/1.1357448
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report on the achievement of mesa-isolated Schottky diodes fabricated from n-GaN epilayers grown by gas-source molecular beam epitaxy on Si(111) that exhibit extremely low noise and dark current. Silicon dioxide grown by plasma-enhanced chemical vapor deposition provided both surface passivation and electrical isolation, and the Schottky contact was a 10 nm Pd thin film. The dark current of an 86x86 mum(2) diode was 2.10x10(-8) A/cm(2) at -2 V bias, and the zero-bias noise power density at 1 Hz is as low a 9x10(-29) A(2)/Hz. (C) 2001 American Institute of Physics.
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页码：2172 / 2174
页数：3
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