Electrochemical impedance spectroscopy of dense silica and porous silicon oxycarbide

被引:10
作者
Cherif, K. Sidi Ali [1 ]
Kordic, S.
Farkas, J.
Szunerits, S.
机构
[1] Philips Semicond, F-38926 Crolles, France
[2] Freescale Semicond, F-38926 Crolles, France
[3] UJF, CNRS, INPG, Lab Electrochim Physicochim Mat Interfaces, F-38402 St Martin Dheres, France
关键词
D O I
10.1149/1.2751836
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Dense silicon dioxide (SiO2) and nanoporous dielectric silicon oxycarbide (SiOCH3) films were investigated in aqueous solutions using electrochemical impedance spectroscopy (EIS). The influence of the film thickness of the dielectric layer was studied through the investigation of the electrochemical impedance characteristics of 120 and 330 nm thick films. Long-time effects of immersing the dielectrics in water were investigated by studying the changes in the Bode spectra over time. The dense but rather rough SiO2 films show no significant changes, indicating unchanged physical properties of the material with neglectable water absorption. However, EIS measurements evidenced that the porous SiOCH3 matrix readily adsorbs water. A pure capacitive behavior was observed at short immersion times, while a second time constant with constant phase element behavior was recorded for the 120 nm thick SiOCH3 matrix after 5 h and for the 330 nm film after 20 h immersion in the aqueous solution. These observations are consistent with moisture absorption. (c) 2007 The Electrochemical Society.
引用
收藏
页码:G63 / G67
页数:5
相关论文
共 11 条
[1]   The apparent constant-phase-element behavior of an ideally polarized blocking electrode -: A global and local impedance analysis [J].
Huang, Vicky Mei-Wen ;
Vivier, Vincent ;
Orazem, Mark E. ;
Pebere, Nadine ;
Tribollet, Bernard .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2007, 154 (02) :C81-C88
[2]   On the origin of capacitance dispersion of rough electrodes [J].
Kerner, Z ;
Pajkossy, T .
ELECTROCHIMICA ACTA, 2000, 46 (2-3) :207-211
[3]   Influence of humidity on electrical characteristics of self-assembled porous silica low-k films [J].
Kikkawa, T ;
Kuroki, S ;
Sakamoto, S ;
Kohmura, K ;
Tanaka, H ;
Hata, N .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2005, 152 (07) :G560-G566
[4]   Novel organosiloxane vapor annealing process for improving properties of porous low-k films [J].
Kohmura, K. ;
Tanaka, H. ;
Oike, S. ;
Murakami, M. ;
Fujii, N. ;
Takada, S. ;
Ono, T. ;
Seino, Y. ;
Kikkawa, T. .
THIN SOLID FILMS, 2007, 515 (12) :5019-5024
[5]   Low dielectric constant materials for microelectronics [J].
Maex, K ;
Baklanov, MR ;
Shamiryan, D ;
Iacopi, F ;
Brongersma, SH ;
Yanovitskaya, ZS .
JOURNAL OF APPLIED PHYSICS, 2003, 93 (11) :8793-8841
[6]  
Pajkossy T, 1996, J ELECTROANAL CHEM, V414, P209
[7]   The evaluation of experimental dielectric data of barrier coatings by means of different models [J].
Schiller, CA ;
Strunz, W .
ELECTROCHIMICA ACTA, 2001, 46 (24-25) :3619-3625
[8]   IN-SITU CHARACTERIZATION OF ANODIC SILICON-OXIDE FILMS BY AC-IMPEDANCE MEASUREMENTS [J].
SCHMUKI, P ;
BOHNI, H ;
BARDWELL, JA .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1995, 142 (05) :1705-1712
[9]   Electrochemical impedance spectroscopy of porous electrodes: the effect of pore size distribution [J].
Song, HK ;
Jung, YH ;
Lee, KH ;
Dao, LH .
ELECTROCHIMICA ACTA, 1999, 44 (20) :3513-3519
[10]   Effect of moisture adsorption on the properties of porous-silica ultralow-k films [J].
Uchida, Y. ;
Hishiya, S. ;
Fujii, N. ;
Kohmura, K. ;
Nakayama, T. ;
Tanaka, H. ;
Kikkawa, T. .
MICROELECTRONIC ENGINEERING, 2006, 83 (11-12) :2126-2129