Temperature effects on the radiative recombination in self-assembled quantum dots

被引：115
作者：
Fafard, S
Raymond, S
Wang, G
Leon, R
Leonard, D
Charbonneau, S
Merz, JL
Petroff, PM
Bowers, JE
机构：
[1] UNIV CALIF SANTA BARBARA, CTR QUANTIZED ELECTR STRUCT, DEPT MAT, SANTA BARBARA, CA 93106 USA
[2] UNIV CALIF SANTA BARBARA, DEPT ELECT & COMP ENGN, SANTA BARBARA, CA 93106 USA
[3] UNIV OTTAWA, DEPT PHYS, OTTAWA, ON K1N 6N5, CANADA
来源：
SURFACE SCIENCE | 1996年 / 361卷 / 1-3期
基金：
加拿大自然科学与工程研究理事会;
关键词：
gallium arsenide; indium arsenide; molecular beam epitaxy; photoluminescence; quantum effects; quantum wells; self-assembly; surface tension;
D O I：
10.1016/0039-6028(96)00532-8
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Several ensembles of self-assembled quantum dots (QDs) based on the AlInAs/AlGaAs and InGaAs/GaAs material systems have been investigated using photoluminescence (PL), PL excitation (PLE) and time-resolved PL (TRPL). The influence of the temperature is measured by monitoring sharp spectral features (as narrow as similar to 90 mu eV) obtained when probing the PL of small QD ensembles (few hundreds QDs). Thermionic emission of the photocarriers out of the QD potential is found to be the dominant mechanism leading to the thermal quenching or the PL and temperature-independent linewidths are observed up to the onset of the PL quenching.
引用
收藏
页码：778 / 782
页数：5
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