Low-Voltage Oxide Homojunction Electric-Double-Layer Transistors Gated by Ion-Incorporated Inorganic Solid Electrolytes

被引：4
作者：
Dou, Wei [1 ,2 ]
Sun, Jia [1 ]
Jiang, Jie [1 ]
Lu, Aixia [1 ]
Wan, Qing [1 ,2 ]
机构：
[1] Hunan Univ, Minist Educ, Key Lab Micro Nano Optoelect Devices, Changsha 410082, Hunan, Peoples R China
[2] Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Zhejiang, Peoples R China
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2010年 / 49卷 / 11期
基金：
中国国家自然科学基金;
关键词：
FIELD-EFFECT TRANSISTORS; THIN-FILM TRANSISTORS;
D O I：
10.1143/JJAP.49.110201
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Porous inorganic dielectrics provide nanochannels for ion transportation which is favorable for electric double layer (EDL) formation 1% CaCl(2) treated porous SiO(2) shows an increased EDL specific capacitance of similar to 4 2 mu F/cm(2) Low voltage (1 0 V) indium-tin oxide based homojunction transistors gated by such a composite solid electrolyte are fabricated and characterized After aging for one month in air ambient without surface passivation such a, device shows an equivalent field effect mobility of 13 cm(2) V(-1) s(-1) a current on/off ratio of 1 0 x 10(6) and a subthreshold swing of 80 mV/decade Control experiment results demonstrate that the CaCl(2) treatment can improve the stability of the EDL transistors (C) 2010 The Japan Society of Applied Physics
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页数：3
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