Optical bistability in a triple semiconductor quantum well structure with tunnelling-induced interference

被引:95
作者
Li, Jiahua [1 ]
Hao, Xiangying [1 ]
Liu, Jibing [1 ]
Yang, Xiaoxue [1 ]
机构
[1] Huazhong Univ Sci & Technol, Dept Phys, Wuhan 430074, Peoples R China
基金
中国国家自然科学基金;
关键词
quantum well (QW); optical bistability (OB); tunnelling-induced interference;
D O I
10.1016/j.physleta.2007.08.011
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We study the behavior of optical bistability (OB) in a triple semiconductor quantum well structure with tunnelling-induced interference, where the system is driven coherently by the probe laser inside the unidirectional ring cavity. The results show that we are able to control efficiently the bistable threshold intensity and the hysteresis loop by tuning the parameters of the system such as laser frequency and tunnelling-induced frequency splitting. This investigation can be used for the development of new types of nanoelectronic devices for realizing switching process. (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码:716 / 720
页数:5
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