Dual-gate β-Ga2O3 nanomembrane transistors: device operation and analytical modelling

被引：5
作者：
Sengupta, Anumita [1 ]
Bhattacharyya, Tarun Kanti [1 ]
Dutta, Gourab [1 ]
机构：
[1] Indian Inst Technol Kharagpur, Dept Elect & Elect Commun Engn, Kharagpur 721302, W Bengal, India
来源：
JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2021年 / 54卷 / 40期
关键词：
analytical modelling; dual-gate field effect transistor; gallium oxide (Ga2O3); nanomembrane; normally-OFF; simulation; threshold voltage; FIELD-EFFECT TRANSISTORS; THRESHOLD VOLTAGE; OXIDE; POWER; MOSFET;
D O I：
10.1088/1361-6463/ac0de4
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The physical operation and performance of a dual gate beta-gallium oxide nanomembrane field effect transistor (NM-FET) with asymmetric top and back gate oxide thicknesses are investigated for different modes of operation. A physics-based device simulator calibrated with experimental data is used for this purpose. Normally-OFF operation of the NM-FET is demonstrated by electrically tuning the top gate threshold voltage with the applied back gate bias. In addition, analytical models of threshold voltage for all the different modes of operation are presented and the proposed models are rigorously validated with simulation results and experimental data. The effect of individual device parameters on the threshold voltage of the normally-OFF NM-FET is further investigated using the analytical model.
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页数：11
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