Influence of antiferroelectric-like behavior on tuning properties of ferroelectric HZO-based varactors

被引：5

作者：

Abdulazhanov, Sukhrob ^{[1
]}

Lederer, Maximilian ^{[1
]}

Lehninger, David ^{[1
]}

Ali, Tarek ^{[1
]}

Emara, Jennifer ^{[1
]}

Olivo, Ricardo ^{[1
]}

Kaempfe, Thomas ^{[1
]}

机构：

[1] Fraunhofer IPMS Ctr Nanoelect Technol CNT, Bartlake 5, D-01109 Dresden, Germany

来源：

MRS ADVANCES | 2021年 / 6卷 / 21期

关键词：

D O I：

10.1557/s43580-021-00105-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this article, we investigate the capacitance-voltage (C-V) characteristics of HfxZr O-1-x(2) metal-ferroelectric-metal (MFM) thin-film capacitors with various Zr doping for varactor applications. The impact of field cycling during the wake-up process on the capacitance was analyzed. In addition, the effect of antiferroelectric-like (AFE) behavior on tuning was investigated. The transition between ferroelectric (FE) and AFE regime is particularly interesting for varactor application, as a reduced bias is required for tuning. The cycle dependence of the FE and AFE properties at elevated temperatures was also investigated, where it was shown that with an increase of temperature, the tunability is reduced. Temperature measurements also comply with recent studies of ferroelastic nature of AFE behavior.

引用

页码：530 / 534

页数：5

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