Room-temperature photoluminescence of amorphous hydrogenated silicon carbide doped with erbium

Room temperature photoluminescence of Er ions at 1.54 mu m corresponding to (4)I(13/2) - (4)I(15/2) transition in the ion f-shell was observed in erbium-doped hydrogenated amorphous silicon carbide films (a-Si(1-x)C(x):H[Er]). Films of a-Si(1-x)C(x):H[Er] were prepared by co-sputtering of graphite and Er targets applying the magnetron-assisted silane-decomposition technique with mixtures of Ar and silane. The composition of films (x) was 0 less than or equal to x less than or equal to 0.29. The concentration of incorporated Er-ions was 6 x 10(19) cm(-3). The excitation mechanism of the Er ions in amorphous hydrogenated silicon carbide doped with erbium is discussed within the framework of the defect related Auger excitation model. (C) 1998 Elsevier Science B.V. All rights reserved.