Surface-Emitting Quantum Cascade Laser with 2nd-order Metal-Semiconductor Gratings for Single-Lobe Emission

被引:0
|
作者
Boyle, C. [1 ]
Sigler, C. [1 ]
Kirch, J. D. [1 ]
Lindberg, D. [2 ]
Earles, T. [2 ]
Botez, D. [1 ]
Mawst, L. J. [1 ]
机构
[1] Univ Wisconsin, Dept Elect & Comp Engn, 1415 Johnson Dr, Madison, WI 53706 USA
[2] Intraband LLC, Madison, WI 53726 USA
来源
NOVEL IN-PLANE SEMICONDUCTOR LASERS XV | 2016年 / 9767卷
关键词
quantum cascade laser; surface emitting laser; semiconductor laser; DISTRIBUTED-FEEDBACK LASERS; FAR-FIELD; PHASESHIFT; OPERATION; ARRAYS;
D O I
10.1117/12.2209105
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Grating-coupled, surface-emitting (GCSE) quantum-cascade lasers (QCLs) are demonstrated with high-power, single-lobe surface emission. A 2nd-order Au-semiconductor distributed-feedback (DFB)/ distributed-Bragg-reflector (DBR) grating is used for feedback and out-coupling. The DFB and DBR grating regions are 2.55 mm- and 1.28 mm-long, respectively, for a total grating length of 5.1 mm. The lasers are designed to operate in a symmetric longitudinal mode by causing resonant coupling of the guided optical mode to the antisymmetric surface-plasmon modes of the 2nd-order metal/semiconductor grating. In turn, the antisymmetric longitudinal modes are strongly absorbed by the metal in the grating, causing the symmetric longitudinal mode to be favored to lase, which produces a single lobe beam over a grating duty-cycle range of 36-41 %. Simulations indicate that the symmetric mode is always favored to lase, independent of the random phase of residual reflections from the device's cleaved ends. Peak pulsed output powers of similar to 0.4 W were measured with single-lobe, single-mode operation near 4.75 mu m.
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页数:11
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