Analysis of surface roughness in Ti/Al/Ni/Au Ohmic contact to AlGaN/GaN high electron mobility transistors

被引：106

作者：

Gong, Rumin ^{[1
]}

Wang, Jinyan ^{[1
]}

Liu, Shenghou ^{[1
]}

Dong, Zhihua ^{[1
]}

Yu, Min ^{[1
]}

Wen, Cheng P. ^{[1
]}

Cai, Yong ^{[2
]}

Zhang, Baoshun ^{[2
]}

机构：

[1] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China

[2] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215125, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 06期

基金：

中国国家自然科学基金;

关键词：

aggregation; aluminium; aluminium compounds; gallium compounds; gold; high electron mobility transistors; III-V semiconductors; nickel; ohmic contacts; rapid thermal annealing; semiconductor-metal boundaries; surface morphology; surface roughness; titanium; transmission electron microscopy; wide band gap semiconductors; X-ray chemical analysis; MICROSTRUCTURE; RESISTANCE; GAN;

D O I：

10.1063/1.3479928

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A mechanism of the formation of the bulges on the surface of Ti/Al/Ni/Au Ohmic contact in AlGaN/GaN high electron mobility transistors is proposed. According to the analysis of TEM images and corresponding electron dispersive x-ray spectra, the bulges were found to consist of Ni-Al alloy in the body and Au-Al alloy surrounding. We deduce that the bulges were formed due to Ni-Al alloy aggregation in some local areas during the rapid thermal annealing process, which accounts for the rough surface morphology. (C) 2010 American Institute of Physics. [doi:10.1063/1.3479928]

引用

页数：3

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