Resonant spin amplification in n-type GaAs

被引：1041

作者：

Kikkawa, JM ^{[1
]}

Awschalom, DD ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Phys, Santa Barbara, CA 93106 USA

来源：

PHYSICAL REVIEW LETTERS | 1998年 / 80卷 / 19期

关键词：

D O I：

10.1103/PhysRevLett.80.4313

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Extended electron spin precession in n-type GaAs bulk semiconductors is directly observed by femtosecond time-resolved Faraday rotation in the Voigt geometry. Synchronous optical pumping of the spin system amplifies and sustains spin motion, exposing a regime where spin lifetimes increase tenfold at low fields and exceed 100 ns at zero field. Precise studies in field and temperature provide clues to the relevant electron relaxation mechanisms, indicating a strong dependence on doping concentration.

引用

页码：4313 / 4316

页数：4

共 50 条

[21] CATHODOLUMINESCENCE OF N-TYPE GAAS [J].

PANKOVE, JI .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (12) :5368-&

[22] The current-voltage characteristics of heterostructures formed by MEH-PPV spin-coated on n-type GaAs and n-type porous GaAs [J].

Ben Jomaa, T ;

Beji, L ;

Ltaeif, A ;

Bouazizi, A .

MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS, 2006, 26 (2-3) :530-533

[23] Light controlled spin polarization in asymmetric n-type resonant tunneling diode [J].

Dos Santos, L. F. ;

Gobato, Y. Galvao ;

Marques, G. E. ;

Brasil, M. J. S. P. ;

Henini, M. ;

Airey, R. .

APPLIED PHYSICS LETTERS, 2007, 91 (07)

[24] Resonant amplification of spin transferred across a GaAs/ZnSe interface [J].

Malajovich, I ;

Kikkawa, JM ;

Awschalom, DD ;

Berry, JJ ;

Samarth, N .

JOURNAL OF APPLIED PHYSICS, 2000, 87 (09) :5073-5075

[25] Hot carrier effects on lateral electron spin diffusion in n-type GaAs [J].

Quast, J. -H. ;

Henn, T. ;

Kiessling, T. ;

Ossau, W. ;

Molenkamp, L. W. ;

Reuter, D. ;

Wieck, A. D. .

PHYSICAL REVIEW B, 2013, 87 (20)

[26] Polarization resolved luminescence in asymmetric n-type GaAs/AlGaAs resonant tunneling diodes [J].

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Gobato, Y. Galvao ;

Lopez-Richard, V. ;

Marques, G. E. ;

Brasil, M. J. S. P. ;

Henini, M. ;

Airey, R. J. .

APPLIED PHYSICS LETTERS, 2008, 92 (14)

[27] Multiphoton electronic-spin generation and transmission spectroscopy in n-type GaAs [J].

Miah, M. Idrish .

PHYSICS LETTERS A, 2011, 375 (03) :647-650

[28] TEMPERATURE DEPENDENCE OF SPIN DEPOLARIZATION OF DRIFTING ELECTRONS IN n-TYPE GaAs BULKS [J].

Spezia, S. ;

Adorno, D. Persano ;

Pizzolato, N. ;

Spagnolo, B. .

ACTA PHYSICA POLONICA B, 2010, 41 (05) :1171-1180

[29] Proton irradiation of n-type GaAs [J].

Goodman, SA ;

Auret, FD ;

Ridgway, M ;

Myburg, G .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1999, 148 (1-4) :446-449

[30] INVESTIGATION OF PIEZORESISTANCE OF N-TYPE GAAS [J].

DRAGUNOV, VP ;

KOZEEV, EV ;

KRAVCHEN.AF ;

KHOLYAVK.VN .

SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 7 (08) :983-985

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