Resonant spin amplification in n-type GaAs

被引：1041

作者：

Kikkawa, JM ^{[1
]}

Awschalom, DD ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Phys, Santa Barbara, CA 93106 USA

来源：

PHYSICAL REVIEW LETTERS | 1998年 / 80卷 / 19期

关键词：

D O I：

10.1103/PhysRevLett.80.4313

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Extended electron spin precession in n-type GaAs bulk semiconductors is directly observed by femtosecond time-resolved Faraday rotation in the Voigt geometry. Synchronous optical pumping of the spin system amplifies and sustains spin motion, exposing a regime where spin lifetimes increase tenfold at low fields and exceed 100 ns at zero field. Precise studies in field and temperature provide clues to the relevant electron relaxation mechanisms, indicating a strong dependence on doping concentration.

引用

页码：4313 / 4316

页数：4

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