Kinetics of self-assembled InN quantum dots grown on Si (111) by plasma-assisted MBE

被引：12
作者：
Kumar, Mahesh [1 ,2 ]
Roul, Basanta [1 ,2 ]
Bhat, Thirumaleshwara N. [1 ]
Rajpalke, Mohana K. [1 ]
Sinha, Neeraj [3 ]
Kalghatgi, A. T. [2 ]
Krupanidhi, S. B. [1 ]
机构：
[1] Indian Inst Sci, Mat Res Ctr, Bangalore 560012, Karnataka, India
[2] Bharat Elect, Cent Res Lab, Bangalore 560013, Karnataka, India
[3] Govt India, Off Principal Sci Advisor, New Delhi 110011, India
来源：
JOURNAL OF NANOPARTICLE RESEARCH | 2011年 / 13卷 / 03期
关键词：
Indium nitride; Kinetics; Photoluminescence; Scaling behavior; Semiconductor quantum dot; SUBMONOLAYER EPITAXIAL-GROWTH; MORPHOLOGY;
D O I：
10.1007/s11051-010-0121-1
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
One of the scientific challenges of growing InN quantum dots (QDs), using Molecular beam epitaxy (MBE), is to understand the fundamental processes that control the morphology and distribution of QDs. A systematic manipulation of the morphology, optical emission, and structural properties of InN/Si (111) QDs is demonstrated by changing the growth kinetics parameters such as flux rate and growth time. Due to the large lattice mismatch, between InN and Si (similar to 8%), the dots formed from the Strannski-Krastanow (S-K) growth mode are dislocated. Despite the variations in strain (residual) and the shape, both the dot size and pair separation distribution show the scaling behavior. We observed that the distribution of dot sizes, for samples grown under varying conditions, follow the scaling function.
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收藏
页码：1281 / 1287
页数：7
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