Low band gap conjugated small molecules containing benzobisthiadiazole and thienothiadiazole central units: synthesis and application for bulk heterojunction solar cells

被引:57
作者
Mikroyannidis, J. A. [1 ]
Tsagkournos, D. V. [1 ]
Sharma, S. S. [2 ]
Vijay, Y. K. [3 ]
Sharma, G. D. [4 ,5 ]
机构
[1] Univ Patras, Dept Chem, Chem Technol Lab, GR-26500 Patras, Greece
[2] Govt Engn Coll Women, Dept Phys, Ajmer, Rajasthan, India
[3] Univ Rajasthan, Thin film & Membrane Sci Lab, Jaipur 302004, Rajasthan, India
[4] Jai Narain Vyas Univ, Dept Phys, Mol Elect & Optoelect Device Lab, Jodhpur 342005, Rajasthan, India
[5] Jaipur Engn Coll, R&D Ctr Sci & Engn, Jaipur, Rajasthan, India
关键词
NANOSCALE PHASE-SEPARATION; OPEN-CIRCUIT VOLTAGE; PHOTOVOLTAIC CELLS; AROMATIC-DONOR; PHENYLENEVINYLENE COPOLYMER; POLYMER; EFFICIENT; PERFORMANCE; THIOPHENE; BENZOTHIADIAZOLE;
D O I
10.1039/c0jm03436c
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Two novel conjugated low band gap small molecules (SMs), M1 and M2, containing benzobisthiadiazole and thienothiadiazole central units, respectively, were synthesized. Both SMs carried terminal cyanovinylene 4-nitrophenyl at both sides which were connected to the central unit with a thiophene ring. The long-wavelength absorption band was located at 591-643 nm and the optical band gap was 1.62-1.63 eV, which is lower than that of P3HT. These two SMs were investigated as electron donor materials along with PCBM or F as electron acceptors for fabrication of bulk heterojunction (BHJ) organic photovoltaic devices. F is a modified PCBM which has been previously synthesized and used as an electron acceptor for poly(3-hexylthiophene) (P3HT). The power conversion efficiency (PCE) for M1:PCBM, M1:F, M2:PCBM and M2:F was 1.05%, 2.02%, 1.23% and 2.72%, respectively. The higher PCE for the devices with M2 as the electron donor has been related to the improved hole mobility for M2. However, the improved PCE for the devices with F as the electron acceptor has been attributed to the more intense absorption of F in the visible region than that of PCBM and also to the higher open circuit voltage resulting from the higher LUMO level of F. We have also fabricated devices with M2:F cast film from mixed solvents. The PCE for the BHJ devices with the as cast and thermally annealed M2:F (mixed solvents) is 3.34% and 3.65%, respectively.
引用
收藏
页码:4679 / 4688
页数:10
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