Growth and properties of LPCVD W-Si-N barrier layers

被引：20

作者：

Bystrova, S

Holleman, J

Woerlee, PH

机构：

[1] Univ Twente, Fac Elect Engn, Semicond Devices Grp, NL-7500 AE Enschede, Netherlands

[2] Philips Res, NL-5656 Eindhoven, Netherlands

来源：

MICROELECTRONIC ENGINEERING | 2001年 / 55卷 / 1-4期

关键词：

diffusion barrier; copper metallization; LPCVD;

D O I：

10.1016/S0167-9317(00)00447-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work the low-temperature low pressure chemical vapour deposition (LPCVD) of W-Si-N compounds in the WF6-NF3-SiH4-Ar system is presented. Layers were deposited on oxidised Si-wafers at 385 and 250 degreesC. Thermodynamical calculations for the WF6:NF3:SiH4:Ar system at different ratios of gas components were made. Simultaneously an experimental study was performed at different deposition conditions. At 385 degreesC, crystalline layers, and at 250 degreesC, amorphous layers with smooth surfaces were obtained under several conditions. The resistivity of W-Si-N layers deposited at 385 degreesC decreases from 3000 mu Omega cm to 550 mu Omega cm as the W/N ratio increases from 1.3 to 10.2. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：189 / 195

页数：7

共 7 条

[1] Evaluation of LPCVD Me-Si-N (Me = Ta, Ti, W, Re) diffusion barriers for Cu metallizations [J].