STM-induced H atom desorption from Si(100): Isotope effects and site selectivity

被引:160
作者
Avouris, P
Walkup, RE
Rossi, AR
Shen, TC
Abeln, GC
Tucker, JR
Lyding, JW
机构
[1] UNIV ILLINOIS, DEPT ELECT & COMP ENGN, URBANA, IL 61801 USA
[2] UNIV ILLINOIS, BECKMAN INST, URBANA, IL 61801 USA
关键词
D O I
10.1016/0009-2614(96)00518-0
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We investigate the scanning tunnelling microscopy-induced H and D atom desorption from Si(100)-(2 x 1):H(D). The desorption of both atoms shows the same energy threshold that corresponds well with the computed sigma --> sigma* excitation energy of the Si-H group, The H desorption yield, however, is much higher than the D yield. We ascribe this to the greater influence of quenching processes on the excited state of the Si-D species. We use wavepacket dynamics to follow the motion of H and D atoms, and conclude that desorption occurs, for the most part, from the 'hot' ground state populated by the quenching process. Site-selective excitation-induced chemistry is found in the desorption of H from Si(100)-(3 x 1):H.
引用
收藏
页码:148 / 154
页数:7
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