Gapless Dirac Electron Mobility and Quantum Time in HgTe Quantum Wells

被引:1
作者
Dobretsova, A. A. [1 ,2 ]
Kvon, Z. D. [1 ,2 ]
Braginskii, L. S. [1 ,2 ]
Entin, M. V. [1 ,2 ]
Mikhailov, N. N. [1 ,2 ]
机构
[1] Russian Acad Sci, Rzhanov Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, Russia
[2] Novosibirsk State Univ, Novosibirsk 630090, Russia
基金
俄罗斯科学基金会;
关键词
SCATTERING; ROUGHNESS; FERMIONS;
D O I
10.1134/S1063782618110076
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The mobility and quantum time of Dirac electrons in HgTe quantum wells with near-critical thickness corresponding to the transition from the direct to inverted spectrum are experimentally and theoretically investigated. The nonmonotonic dependence of the mobility on the electron concentration is experimentally established. The theory of the scattering of Dirac electrons by impurities and irregularities of the well boundaries leading to well thickness fluctuations is constructed. The comparison of this theory with an experiment shows their good agreement and explains the observed nonmonotonic behavior by a decrease in the ratio between the de Broglie wavelength of Dirac electrons and the characteristic size of irregularities with increasing electron concentration. It is established that the transport time is larger than the quantum time by almost an order of magnitude in the case of the dominance of roughness scattering. The transition from macroscopic to mesoscopic samples is studied and an abrupt decrease in both the mobility and quantum time is observed. This behavior is attributed to the size effect on the free path length.
引用
收藏
页码:1468 / 1472
页数:5
相关论文
共 15 条
[1]   ELECTRONIC-PROPERTIES OF TWO-DIMENSIONAL SYSTEMS [J].
ANDO, T ;
FOWLER, AB ;
STERN, F .
REVIEWS OF MODERN PHYSICS, 1982, 54 (02) :437-672
[2]   Single valley Dirac fermions in zero-gap HgTe quantum wells [J].
Buettner, B. ;
Liu, C. X. ;
Tkachov, G. ;
Novik, E. G. ;
Bruene, C. ;
Buhmann, H. ;
Hankiewicz, E. M. ;
Recher, P. ;
Trauzettel, B. ;
Zhang, S. C. ;
Molenkamp, L. W. .
NATURE PHYSICS, 2011, 7 (05) :418-422
[3]  
CHAPLIK AV, 1969, SOV PHYS JETP-USSR, V28, P514
[4]  
Davies J. H., 1998, PHYS LOW DIMENSIONAL
[5]   Surface states in a HgTe quantum well and scattering by surface roughness [J].
Dobretsova, A. A. ;
Braginskii, L. S. ;
Entin, M. V. ;
Kvon, Z. D. ;
Mikhailov, N. N. ;
Dvoretsky, S. A. .
JETP LETTERS, 2015, 101 (05) :330-333
[6]   ELECTRONIC TRANSPORT-PROPERTIES OF A TWO-DIMENSIONAL ELECTRON-GAS IN A SILICON QUANTUM-WELL STRUCTURE AT LOW-TEMPERATURE [J].
GOLD, A .
PHYSICAL REVIEW B, 1987, 35 (02) :723-733
[7]   Quantum Hall Effect in a System of Gapless Dirac Fermions in HgTe Quantum Wells [J].
Kozlov, D. A. ;
Kvon, Z. D. ;
Mikhailov, N. N. ;
Dvoretskii, S. A. .
JETP LETTERS, 2015, 100 (11) :724-730
[8]   Weak Localization of Dirac Fermions in HgTe Quantum Wells [J].
Kozlov, D. A. ;
Kvon, Z. D. ;
Mikhailov, N. N. ;
Dvoretsky, S. A. .
JETP LETTERS, 2013, 96 (11) :730-734
[9]   Cyclotron Resonance of Dirac Ferions in HgTe Quantum Wells [J].
Kvon, Z. D. ;
Danilov, S. N. ;
Kozlov, D. A. ;
Zoth, C. ;
Mikhailov, N. N. ;
Dvoretskii, S. A. ;
Ganichev, S. D. .
JETP LETTERS, 2012, 94 (11) :816-819
[10]  
Novik E. L., COMMUNICATION