Surface Mount, 50 Watt Peak GaN Power Amplifier for Low-Cost S-Band Radar

被引:0
作者
Bajgot, Douglas A. [1 ]
Semuskie, Stephen [1 ]
Burns, Christopher T. [2 ]
机构
[1] Cobham Elect Syst, Lowell, MA 01854 USA
[2] RF Micro Devices, Power Broadband Business Unit, Chandler, AZ USA
来源
2013 IEEE INTERNATIONAL SYMPOSIUM ON PHASED ARRAY SYSTEMS AND TECHNOLOGY | 2013年
关键词
GaN; TR Module; SMT; Phased Array Radar; AESA;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The pressure for cost reduction on active aperture phased array systems has continued unabated for at least the last several decades. As part of a phased array system, the Transmit/Receive (T/R) Module, or more recently T/R "Slat," is a major element in system cost, and hence a target for cost reduction. Further, for the T/R Slat itself, the final transmit power amplifier has historically been among the most costly elements of the T/R slat, and therefore a leading candidate for cost reduction Fortunately, the mechanisms of advancing maturity and market acceptance are creating many opportunities for insertion of GaN technology. In our application, we have found GaN to be cost-competitive with a GaAs solution, and with other system-level factors considered, actually more cost-effective. This cost advantage comes from both the high device efficiency, which reduces system level operating costs and cooling requirements, as well as the packaging of the device for a fully automated surface mount assembly process.
引用
收藏
页码:59 / 63
页数:5
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