Theoretical investigation of in situ k-restore processes for damaged ultra-low-k dielectrics

被引：0

作者：

Foerster, Anja ^{[1
,2
]}

Wagner, Christian ^{[2
]}

Schuster, Jorg ^{[1
]}

Gemming, Sibylle ^{[2
,3
]}

机构：

[1] Fraunhofer ENAS, Technol Campus 3, D-09126 Chemnitz, Germany

[2] TU Chemnitz, Reichenhainer Str 70, D-09126 Chemnitz, Germany

[3] Helmholtz Zentrum Dresden Rossendorf, Inst Ion Beam Phys & Mat Res, Bautzner Landstr 400, D-01328 Dresden, Germany

来源：

MICROELECTRONIC ENGINEERING | 2016年 / 156卷

关键词：

k-Restore; Low-k materials; DFT; MD; Plasma repair;

D O I：

10.1016/j.mee.2015.12.012

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ultra-low-k (ULK) materials are essential for today's production of integrated circuits (ICs). However, during the manufacturing process, the ULK's low dielectric constant (k-value) increases due to the replacement of hydrophobic species with hydrophilic groups. We investigate the use of plasma enhanced fragmented silylation precursors to repair this damage. The fragmentation of the silylation precursors octamethylcyclotetrasiloxane (OMCTS) and bis(dimethylamino)-dimethylsilane (DMADMS) and their possible repair reactions are studied using density functional theory (DFT) and molecular dynamics (MD) simulations. (C) 2015 Elsevier B.V. All rights reserved.

引用

页码：121 / 125

页数：5

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