Theoretical study on photon-phonon coupling at (001)-(2x1) surfaces of Ge and α-Sn

被引：0

作者：

Perez-Sanchez, F. L. ^{[2
]}

Perez-Rodriguez, F. ^{[1
]}

机构：

[1] Benemerita Univ Autonoma Puebla, Inst Fis, Puebla 72570, Pue, Mexico

[2] Univ Autonoma Benito Juarez Oaxaca, Escuela Ciencias, Oaxaca De Juarez 68120, Oax, Mexico

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2011年 / 248卷 / 06期

关键词：

Ge; infrared spectroscopy; surface phonons; Sn; CHEMICAL-VAPOR-DEPOSITION; AB-INITIO CALCULATIONS; BOND-CHARGE MODEL; REFLECTANCE ANISOTROPY; SI(001)(2X1) SURFACE; VIBRATIONAL SPECTROSCOPY; SEMICONDUCTOR SURFACES; CUBIC SEMICONDUCTORS; ELECTRONIC-STRUCTURE; RAMAN-SCATTERING;

D O I：

10.1002/pssb.201046493

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We present a study of the far-infrared reflectance anisotropy spectra for (001) surfaces of Ge and alpha-Sn in the (2 x 1) asymmetric dimer geometry, which exhibit a resonance structure associated with the excitation of surface phonon modes. We have employed a theoretical formalism, based on the adiabatic bond-charge model (ABCM), for computing the far-infrared reflectance anisotropy spectra. In comparison with previous theoretical results for silicon and diamond surfaces, the resonance structure in the reflectance anisotropy spectrum for Ge(001)-(2 x 1) turns out to be similar to that observed in the spectrum for the Si(001)-(2 x 1) surface, whereas the spectrum for a-Sn(001)-(2 x 1) surface is noticeably different from the others. We have established a trend of far-infrared reflectance anisotropy spectra for IV(001) surfaces: the weaker dimer strength, the stronger resonances of low-frequency surface phonons. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：1379 / 1387

页数：9

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