Flexible Graphene Field-Effect Transistors With Extrinsic fmax of 28 GHz

被引:12
作者
Lan, Yu [1 ]
Xu, Yuehang [1 ]
Wu, Yun [1 ]
Cao, Zhengyi [2 ]
Chen, Tangsheng [2 ]
Zhou, Jinhao [1 ]
Wu, Yunqiu
Chen, Yuanfu [1 ]
Yan, Bo [1 ]
Xu, Ruimin [1 ]
Li, Yanrong [1 ]
机构
[1] Univ Elect Sci & Technol China, Sch Elect Sci & Engn, Chengdu 611731, Sichuan, Peoples R China
[2] Nanjing Elect Devices Inst, Sci & Technol Monolith Integrated Circuits & Mod, Nanjing 210016, Jiangsu, Peoples R China
基金
中国国家自然科学基金;
关键词
Flexible; graphene transistors; Au-supported transfer technology; extrinsic power gain;
D O I
10.1109/LED.2018.2876010
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Graphene field-effect transistors (G-FETs) on flexible substrates have demonstrated much higher strain limits than that on rigid substrates. In this letter, G-FETs with an extrinsic f(max) of 28 GHz on flexible polyethylene terephthalate (PET) substrates are presented. Polyimide film benzocyclobutene with 50-nm thickness is coated on a PET substrate surface for optimizing the carrier transport. The results show that the hole mobility can reach up to 1738 cm(2)/V.s. An Au-supported graphene transfer technology is used to facilitate the quality of graphene in G-FETs and reduce the output parasitic resistance to 50 Omega. The measured figure of metric of "f(max).Lg" is 8.4 GHz.mu m, which is 105% higher than the highest reported results on polymeric substrates. The RF performance of flexible G-FETs under the bending condition is also studied. The results of the letter will be useful for developing the millimeter-wave flexible graphene integrated circuits.
引用
收藏
页码:1944 / 1947
页数:4
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