Ferroelectric Polarization Effect on Al-Nb Codoped Pb(Zr0.52Ti0.48)O3/Pr0.7Ca0.3MnO3 Heterostructure Resistive Memory

被引：8

作者：

Bourim, El Mostafa ^{[1
]}

Park, Sangsoo ^{[2
]}

Liu, Xinjun ^{[2
]}

Biju, Kuyyadi P. ^{[1
]}

Hwang, Hyunsang ^{[1
,2
]}

Ignatiev, Alex ^{[1
,3
]}

机构：

[1] Gwangju Inst Sci & Technol, Dept Nanobio Mat & Elect, Kwangju 500712, South Korea

[2] Gwangju Inst Sci & Technol, Dept Mat Sci & Engn, Kwangju 500712, South Korea

[3] Univ Houston, Ctr Adv Mat, Houston, TX 77204 USA

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2011年 / 14卷 / 05期

关键词：

FILMS; MANGANITES; STRAIN;

D O I：

10.1149/1.3556977

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

This work presents the investigation of resistive switching memory in a perovskite heterostructure composed of an active Al-Nb codoped Pb(Zr0.52Ti0.48)O-3 ferroelectric thin film and a semiconducting Pr0.7Ca0.3MnO3 manganite-based oxide film, both sandwiched between Pt electrodes in a parallel capacitor-like structure. Bipolar resistive switching nature was confirmed from the measured characteristics of the DC I-V hysteresis loop and resistance switching in the pulse mode. The active ferroelectric layer has been demonstrated to play a crucial role in controlling the switching memory performance (resistance state stability and high switching endurance). Ferroelectric polarization and corresponding piezoelectric effect-induced lattice strains are found to be responsible for the resistive switching characteristics in this ferroelectric/manganite heterojunction. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3556977] All rights reserved.

引用

页码：H225 / H228

页数：4

共 19 条

[1] Point defect chemistry of metal oxide heterostructures [J].

Aggarwal, S ;

Ramesh, R .

ANNUAL REVIEW OF MATERIALS SCIENCE, 1998, 28 :463-499

[2]

Baek SH, 2010, NAT MATER, V9, P309, DOI [10.1038/nmat2703, 10.1038/NMAT2703]

[3] FERROELECTRIC SCHOTTKY DIODE [J].

BLOM, PWM ;

WOLF, RM ;

CILLESSEN, JFM ;

KRIJN, MPCM .

PHYSICAL REVIEW LETTERS, 1994, 73 (15) :2107-2110

[4] Metal-insulator transition above room temperature in maximum colossal magnetoresistance manganite thin films [J].

Chen, XJ ;

Habermeier, HU ;

Zhang, H ;

Gu, G ;

Varela, M ;

Santamaria, J ;

Almasan, CC .

PHYSICAL REVIEW B, 2005, 72 (10)

[5] Strain effect on electronic transport and ferromagnetic transition temperature in La0.9Sr0.1MnO3 thin films -: art. no. 174402 [J].

Chen, XJ ;

Soltan, S ;

Zhang, H ;

Habermeier, HU .

PHYSICAL REVIEW B, 2002, 65 (17) :1744021-1744026

[6] Multiferroic bilayers of manganites and titanates [J].

Dörr, K ;

Thiele, C .

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2006, 243 (01) :21-28

[7] Stress control and ferroelectric properties of lead zirconate titanate (PZT) thin film on Si substrate with buffer layers [J].

Fujito, K ;

Wakiya, N ;

Mizutani, N ;

Shinozaki, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (9B) :6900-6904

[8] Interferometric measurements of electric field-induced displacements in piezoelectric thin films [J].

Kholkin, AL ;

Wutchrich, C ;

Taylor, DV ;

Setter, N .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1996, 67 (05) :1935-1941

[9] Theoretical current-voltage characteristics of ferroelectric tunnel junctions [J].

Kohlstedt, H ;

Pertsev, NA ;

Contreras, JR ;

Waser, R .

PHYSICAL REVIEW B, 2005, 72 (12)

[10] Effect of strain and tetragonal lattice distortions in doped perovskite manganites [J].

Lu, Yafeng ;

Klein, J. ;

Herbstritt, F. ;

Philipp, J. B. ;

Marx, A. ;

Gross, R. .

PHYSICAL REVIEW B, 2006, 73 (18)

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