Edge and impurity effects on quantization of Hall currents

被引:24
作者
Combes, JM
Germinet, F
机构
[1] Univ Toulon & Var, Dept Math, F-83957 La Garde, France
[2] CNRS, Ctr Phys Theor, F-13288 Marseille, France
[3] Univ Cergy Pontoise, Lab AGM, Dept Math, F-95302 Cergy Pontoise, France
关键词
D O I
10.1007/s00220-005-1315-8
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We consider the edge Hall conductance and show it is invariant under perturbations located in a strip along the edge (decaying perturbations far from the edge are also allowed). This enables us to prove for the edge conductances a general sum rule relating currents due to the presence of two different media located respectively on the left and on the right half plane. As a particular interesting case we put forward a general quantization formula for the difference of edge Hall conductances in semi-infinite samples with and without a confining wall. It implies in particular that the edge Hall conductance takes its ideal quantized value under a gap condition for the bulk Hamiltonian, or under some localization properties for a random bulk Hamiltonian (provided one first regularizes the conductance; we shall discuss this regularization issue). Our quantization formula also shows that deviations from the ideal value occurs if a semi-infinite distribution of impurity potentials is repulsive enough to produce current-carrying surface states on its boundary.
引用
收藏
页码:159 / 180
页数:22
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