Pressure-induced metallization in Erbium trihydride

被引：4

作者：

Kuzovnikov, M. A. ^{[1
,3
]}

Eremets, M. I. ^{[2
]}

Drozdov, A. P. ^{[2
]}

Tkacz, M. ^{[1
]}

机构：

[1] PAS, Inst Phys Chem, Warsaw, Poland

[2] Max Planck Inst Chem, Mainz, Germany

[3] RAS, Inst Solid State Phys, Chernogolovka, Russia

来源：

SOLID STATE COMMUNICATIONS | 2017年 / 263卷

基金：

欧洲研究理事会;

关键词：

Semiconductors; High pressure; Metallization; PHASE-TRANSITION;

D O I：

10.1016/j.ssc.2017.07.004

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Electrical resistivity and Raman spectra of ErH3 were studied in a diamond anvil cell under high pressure up to 140 GPa in the temperature range 4-300 K. A crossover from a semiconductor-like to a metallic temperature dependence of resistivity at fixed pressures was observed at about 50 GPa. In the pressure range 80-140 GPa a resistivity maximum was observed at the R(T) dependencies. The temperature corresponding to this maximum linearly increased with pressure increase, reaching 26 K at 140 GPa. No superconductivity was observed in the studied pressure-temperature range.

引用

页码：23 / 26

页数：4

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