Exploring back contact technology to increase CdS/CdTe solar cell efficiency

被引：0
作者：
Fahrenbruch, Alan L. [1 ]
机构：
[1] Colorado State Univ, Dept Phys, Ft Collins, CO 80523 USA
来源：
THIN-FILM COMPOUND SEMICONDUCTOR PHOTOVOLTAICS - 2007 | 2007年 / 1012卷
关键词：
D O I：
暂无
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The primary routes for increasing CdS/CdTe solar cell efficiency involve increasing free carrier density, reducing bulk and interface recombination, and/or reducing back contact barrier height (phi(bc). This paper focuses on the role of the back contact barrier in increasing cell efficiency. Measurement of (phi(bc) and back surface recombination are outlined and three CdTe/MX/M back contact prototypes, each with particular strengths, are discussed.
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页码：283 / 290
页数：8
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