Attractive interaction between Mn atoms on the GaAs(110) surface observed by scanning tunneling microscopy

被引：3

作者：

Taninaka, Atsushi ^{[1
]}

Yoshida, Shoji ^{[1
]}

Kanazawa, Ken ^{[1
]}

Hayaki, Eiko ^{[1
]}

Takeuchi, Osamu ^{[1
]}

Shigekawa, Hidemi ^{[1
]}

机构：

[1] Univ Tsukuba, Fac Pure & Appl Sci, Tsukuba, Ibaraki 3058573, Japan

来源：

NANOSCALE | 2016年 / 8卷 / 24期

基金：

日本学术振兴会;

关键词：

Probability distributions - Semiconducting gallium - Atoms - Gallium arsenide - III-V semiconductors;

D O I：

10.1039/c6nr02190e

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Scanning tunneling microscopy/spectroscopy (STM/STS) was carried out to investigate the structures of Mn atoms deposited on a GaAs(110) surface at room temperature to directly observe the characteristics of interactions between Mn atoms in GaAs. Mn atoms were paired with a probability higher than the random distribution, indicating an attractive interaction between them. In fact, re-pairing of unpaired Mn atoms was observed during STS measurement. The pair initially had a new structure, which was transformed during STS measurement into one of those formed by atom manipulation at 4 K. Mn atoms in pairs and trimers were aligned in the <110> direction, which is theoretically predicted to produce a high Curie temperature.

引用

页码：12118 / 12122

页数：5

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