Fabrication of epitaxially grown PLZT patterned microstructures using a sol-gel method

被引:1
|
作者
Aoki, T
Kurihara, K
Kuwabara, M
机构
[1] Univ Tokyo, Dept Mat Engn, Bunkyo Ku, Tokyo 1138656, Japan
[2] Fujitsu Labs Ltd, Atsugi, Kanagawa 2430197, Japan
来源
ELECTROCERAMICS IN JAPAN VI | 2003年 / 248卷
关键词
PLZT; epitaxial; sol-gel method; microstructure;
D O I
10.4028/www.scientific.net/KEM.248.61
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
A periodic hexagonal array consisting of PLZT crystalline square pillars, 180 nm high and I pin wide, epitaxially grown on a (001) Nb-doped SrTiO3 substrate was obtained using a sol-gel method. A PLZT precursor solution was cast into a resist mold patterned by electron beam lithography, then fired at 725degreesC for 6 minutes. Evaluation of the crystallinity of the pillars using x-ray diffraction showed that it was closer to that of a single-crystal substrate than to that of film.
引用
收藏
页码:61 / 64
页数:4
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