Enhancement in Light Emission Efficiency of a Silicon Nanocrystal Light-Emitting Diode by Multiple-Luminescent Structures

被引：38

作者：

Huh, Chul ^{[1
]}

Kim, Kyung-Hyun ^{[1
]}

Kim, Bong Kyu ^{[1
]}

Kim, Wanjoong ^{[1
]}

Ko, Hyunsung ^{[1
]}

Choi, Chel-Jong ^{[2
]}

Sung, Gun Yong ^{[1
]}

机构：

[1] Elect & Telecommun Res Inst, IT Convergence Technol Res Lab, Taejon 305350, South Korea

[2] Chonbuk Natl Univ, Dept BIN Fus Technol, Jeonju 561756, South Korea

来源：

ADVANCED MATERIALS | 2010年 / 22卷 / 44期

关键词：

SI NANOCRYSTALS; QUANTUM CONFINEMENT; DOTS;

D O I：

10.1002/adma.201001572

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The light output power and wall-plug efficiency of the Si nanocrystal (nc-Si) light-emitting diode (LED) are significantly enhanced by employing the multiple-luminescent structures. This improvement is attributed to a strong confinement of carriers in the SiNx luminescent layers containing the nc-Si due to the band offset between the luminescent layer and barrier layer.

引用

页码：5058 / +

页数：6

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