Mechanical planar biaxial strain effects in Si/SiGe HBT BiCMOS technology

被引：0

作者：

Nayeem, MB ^{[1
]}

Haugerud, BM ^{[1
]}

Krithivasan, R ^{[1
]}

Lu, Y ^{[1
]}

Zhu, CD ^{[1
]}

Belford, RE ^{[1
]}

Cressler, JD ^{[1
]}

Joseph, AJ ^{[1
]}

机构：

[1] Georgia Inst Technol, Sch Elect & Elect Engn, Atlanta, GA 30332 USA

来源：

2004 TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS, DIGEST OF PAPERS | 2004年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The first results of the effects of mechanical planar biaxial tensile strain applied, post fabrication, to Si/SiGe HBT BiCTMOS technology are reported in this work. Planar biaxial tensile strain was applied to the samples, which included both standard Si CMOS, SiGe HBTs, and an epitaxial-base Si BJT control, for both first and second generation SiGe technologies. Device characterization was performed before and after strain, under identical conditions. At a strain level of 0.123%, increases in the saturation current as well as effective mobility are observed for the nFETs. The Si BJT / SiGe HBTs showed a consistent decrease in collector current and hence current gain after strain.

引用

页码：103 / 106

页数：4

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