Li conduction in sputtered amorphous Ta2O5

被引:14
作者
Frenning, G [1 ]
Engelmark, F [1 ]
Niklasson, GA [1 ]
Stromme, M [1 ]
机构
[1] Univ Uppsala, Angstrom Lab, Dept Mat Sci, S-75121 Uppsala, Sweden
关键词
D O I
10.1149/1.1359196
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Electron and Li ion conducting properties of room temperature sputtered amorphous tantalum oxide (a-Ta2O5) films were studied in order to evaluate the feasibility of using a-Ta2O5 in electrochromic device applications. The films were investigated using the galvanostatic intermittent titration technique, impedance spectroscopy, and isothermal transient ionic current measurements. It was found that the a-Ta2O5 met two out of three requirements posed on a Li ion conductor in a WO3 based electrochromic device. There was a negligible intercalation in the potential window used in WO3-based electrochromic devices (above 2.4-2.5 V vs. Li/Li+). Furthermore, in this potential region, the chemical diffusion coefficient for Li was larger than the corresponding quantity in WO3. However, there was a nonzero electron conductivity in the a-Ta2O5 films, not observed in the chemical vapor deposition-made beta -Ta2O5 investigated earlier. Still, the ionic conductivity was approximately one order of magnitude larger than the electronic one. (C) 2001 The Electrochemical Society.
引用
收藏
页码:A418 / A421
页数:4
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