Structure and luminescence evolution of annealed Europium-doped silicon oxides films

被引：48
作者：
Li, Dongsheng [1 ]
Zhang, Xuwu
Jin, Lu
Yang, Deren
机构：
[1] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
来源：
OPTICS EXPRESS | 2010年 / 18卷 / 26期
关键词：
1.54; MU-M; ELECTROLUMINESCENCE; NANOCRYSTALS; IONS;
D O I：
10.1364/OE.18.027191
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Europium (Eu)-doped silicon oxide films with Eu concentrations from 2.1 to 4.7 at. % were deposited by electron beam evaporation. The Eu related luminescence from the films was found to be sensitive to the evolution of film microstructures at different annealing temperatures. Luminescence centers in the films changed from defects of silicon oxides to 4f(6)5d-4f(7)(S-8(7/2)) transition of Eu2+ after the films annealed in N-2 at temperature higher than 800 degrees C. The evolution of luminescence centers was attributed to the formation of europium silicate (EuSiO3), which was confirmed by x-ray photoelectron spectroscopy, x-ray diffraction, time resolved photoluminescence, and transmission electron microscopy. (C) 2010 Optical Society of America
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页码：27191 / 27196
页数：6
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