Influence of process pressure on β-SiC growth by CVD

被引：0

作者：

Andreev, A. A. ^{[1
]}

Sultanov, A. O. ^{[1
]}

Gusev, A. S. ^{[1
]}

Kargin, N. I. ^{[1
]}

Pavlova, E. P. ^{[1
]}

机构：

[1] Natl Res Nucl Univ MEPHI, Moscow, Russia

来源：

1ST INTERNATIONAL SCHOOL AND CONFERENCE SAINT-PETERSBURG OPEN 2014 ON OPTOELECTRONICS, PHOTONICS, ENGINEERING AND NANOSTRUCTURES | 2014年 / 541卷

关键词：

FILMS;

D O I：

10.1088/1742-6596/541/1/012010

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

3C-SiC films grown on Si (100) substrates by CVD method using silane-propanehydrogen system were analyzed for crystallinity at various process pressures. The deposition experiments were carried out in a shower-head type cold-wall CVD reactor. The influence of growth conditions on a structural modification of experimental samples was studied by X-ray diffraction (XRD) measurements, Fourier transform infrared spectroscopy (FTIR) and spectroscopic ellipsometry (SE).

引用

页数：5

共 7 条

[1] Growth of hexagonal GaN thin films on Si(111) with cubic SiC buffer layers [J].