Nanofabrication using structure controlled hydrogenated Si clusters deposited on Si surfaces

被引:3
作者
Kanayama, T
Watanabe, MO
Bolotov, L
Uchida, N
机构
[1] Natl Inst Adv Interdisciplinary Res, Joint Res Ctr Atom Technol, Tsukuba, Ibaraki 3058562, Japan
[2] Angstrom Technol Partnership, JRCAT, Tsukuba, Ibaraki 3050046, Japan
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2000年 / 18卷 / 06期
关键词
D O I
10.1116/1.1324620
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We studied structure formation by deposition of hydrogen-saturated Si clusters Si6H13+ and Si8H19+ on Si (111)-(7X7) surfaces using the deposition system of cluster ions equipped with a scanning tunneling microscope (STM) for surface observation, The system uses a quadrupole ion trap as a mass-selective source of cluster ion beams and delivers to the substrate a beam of Si6H13+ focused to 2 mm diameter with a current of similar to 100 pA for the cluster kinetic energy on impact with the surface >5 eV. It was observed that when these clusters are deposited with suitable kinetic energy, i.e., similar to2 eV/Si atom, the impact energy makes the clusters mobile on the surface, leading to self-formation of cluster-agglomerated structures at step edges and along domain boundaries of (7X7) phases. Intentional manipulation of the deposited clusters is also possible using the STM tip; the clusters can be accumulated to the tip position by applying bias voltage larger than 3 V. (C) 2000 American Vacuum Society. [S0734-211X(00)16306-1].
引用
收藏
页码:3497 / 3500
页数:4
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