Improved characteristic temperature (T0) of a 1.3-μm GaInNAs/GaAs single-quantum-well laser diode through thermal annealing

被引：0

作者：

Kitatani, T ^{[1
]}

Kondow, M ^{[1
]}

Nakahara, K ^{[1
]}

Uomi, K ^{[1
]}

Tanaka, T ^{[1
]}

机构：

[1] Hitachi Ltd, RWCP Opt Interconnect Hitachi Lab, Cent Res Lab, Kokubunji, Tokyo 1858601, Japan

来源：

THIN FILMS FOR OPTICAL WAVEGUIDE DEVICES AND MATERIALS FOR OPTICAL LIMITING | 2000年 / 597卷

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Through optimal thermal annealing of the active region of a 1.3 mum GaInNAs/GaAs single-quantum-well laser diode, we obtained a characteristic temperature (T-0) of 215 K under pulsed operation from 20 degreesC to 80 degreesC. This is the highest yet reported value for a 1.3-mum semiconductor laser. Even under continuous-wave operation, the T-0 was as high as 147 K. The lasing-wavelength change with temperature was as small as 0.39 nm/degreesC, indicating the excellent stability for aGaInNAs laser diode with T-0 of over 200 K. These results demonstrate that GaInNAs is a promising material for fabricating long-wavelength laser diodes used for optical-fiber communications.

引用

页码：33 / 38

页数：6

共 11 条

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