Analysis of BTO-on-Si-waveguides for energy-efficient electro-optical modulators

被引：1
作者：
Steglich, Patrick [1 ,2 ]
Mai, Andreas [1 ,2 ]
机构：
[1] IHP Leibniz Inst Innovat Mikroelekt, D-15236 Frankfurt, Oder, Germany
[2] TH Wildau, D-15745 Wildau, Germany
来源：
INTEGRATED OPTICS: DESIGN, DEVICES, SYSTEMS AND APPLICATIONS VI | 2021年 / 11775卷
关键词：
Pockels effect; Ferroelectric Materials; Barium Titanate; Electro-Optical Modulators; Slot Waveguide; Pockels Modulator; SILICON; PHOTONICS;
D O I：
10.1117/12.2592501
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this work, we analyze a horizontal slot waveguide configuration, which evaluates the potential for an integration of barium titanate (BTO) based modulators into a photonic integrated circuit (PIC) technology based on silicon-on-insulator (SOI) wafer. The waveguide configuration consists of a doped crystal silicon layer, a Ba0.7Sr0.3TiO3 (BST) template layer, a barium titanate (BTO) layer and a doped poly-silicon layer on top. In contrast to current approaches, we analyze the performance of this waveguide-structure by using a vertical electrode configuration that is formed by the doped silicon layer. In this way, the electric field strength is dramatically increased compared to current horizontal electrode configuration.
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页数：6
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