A new molecular precursor for magnesia-silica materials

被引:23
作者
Kriesel, JW
Tilley, TD [1 ]
机构
[1] Univ Calif Berkeley, Dept Chem, Berkeley, CA 94720 USA
[2] Univ Calif Berkeley, Lawrence Berkeley Lab, Div Chem Sci, Berkeley, CA 94720 USA
关键词
D O I
10.1039/b007742i
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The new molecular precursor Mg[OSi((OBu)-Bu-t)(3)](2) was synthesized in high yield from Mg(Bu)(2) and HOSi((OBu)-Bu-t)(3). Thermolytic decomposition of this precursor in toluene solution leads to a magnesia-silica monolith. The monolith can be processed to isolate xerogels or aerogels with surface areas of 245 and 640 m(2) g(-1), respectively. The MgO . 2SiO(2) materials are very acidic, as determined by ammonia temperature programmed desorption (TPD). Additionally, CO2 TPD revealed that these materials have a very low basic site density. The TPD results can be explained by a very high dispersion of MgO in an SiO2 matrix, and are consistent with predictions based on charge balancing in binary oxides.
引用
收藏
页码:1081 / 1085
页数:5
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[1]   SYNTHESIS AND CHARACTERIZATION OF TRIETHYLSILOXY-SUBSTITUTED ALUMOXANES - THEIR STRUCTURAL RELATIONSHIP TO THE MINERALS BOEHMITE AND DIASPORE [J].
APBLETT, AW ;
WARREN, AC ;
BARRON, AR .
CHEMISTRY OF MATERIALS, 1992, 4 (01) :167-182
[2]   VOLATILE METALLOORGANIC PRECURSORS FOR DEPOSITING INORGANIC ELECTRONIC MATERIALS [J].
BRADLEY, DC .
POLYHEDRON, 1994, 13 (08) :1111-1121
[3]   HYDROLYSIS AND CONDENSATION OF SILICATES - EFFECTS ON STRUCTURE [J].
BRINKER, CJ .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1988, 100 (1-3) :31-50
[4]  
BRINKER CJ, 1990, SOL GEL SCI PHYSICS
[5]  
BRUCE DW, 1992, INORGANIC MAT
[6]   CHEMICAL ASPECTS OF SOLUTION ROUTES TO PEROVSKITE-PHASE MIXED-METAL OXIDES FROM METAL-ORGANIC PRECURSORS [J].
CHANDLER, CD ;
ROGER, C ;
HAMPDENSMITH, MJ .
CHEMICAL REVIEWS, 1993, 93 (03) :1205-1241
[7]   Preparation and Structure of Aluminosilicate Aerogels [J].
Chaput, F. ;
Lecomte, A. ;
Dauger, A. ;
Boilot, J. P. .
CHEMISTRY OF MATERIALS, 1989, 1 (02) :199-201
[8]  
CHEETHAM AK, 1994, MAT RES SOC S P, V360
[9]  
CORRIU RJP, 1996, ANGEW CHEM INT EDIT, V35, P1421
[10]   SINGLE-SOURCE III/V PRECURSORS - A NEW APPROACH TO GALLIUM-ARSENIDE AND RELATED SEMICONDUCTORS [J].
COWLEY, AH ;
JONES, RA .
ANGEWANDTE CHEMIE-INTERNATIONAL EDITION IN ENGLISH, 1989, 28 (09) :1208-1215