Fabrication of a Nb-Doped β-Ga2O3 Nanobelt Field-Effect Transistor and Its Low-Temperature Behavior

被引：27

作者：

Chen, Jin-Xin ^{[1
]}

Li, Xiao-Xi ^{[1
]}

Tao, Jia-Jia ^{[1
]}

Cui, Hui-Yuan ^{[2
]}

Huang, Wei ^{[1
]}

Ji, Zhi-Gang ^{[3
]}

Sai, Qing-Lin ^{[2
]}

Xia, Chang-Tai ^{[2
]}

Lu, Hong-Liang ^{[1
]}

Zhang, David Wei ^{[1
]}

机构：

[1] Fudan Univ, Shanghai Inst Intelligent Elect & Syst, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China

[2] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Key Lab Mat High Power Laser, Shanghai 201800, Peoples R China

[3] Shanghai Jiao Tong Univ, Natl Key Lab Sci & Technol Micro Nano Fabricat, Shanghai 200240, Peoples R China

来源：

ACS APPLIED MATERIALS & INTERFACES | 2020年 / 12卷 / 07期

基金：

上海市自然科学基金; 中国国家自然科学基金;

关键词：

well-behaved; gallium oxide; field-effect transistors; Nb-doped; temperature dependence; harsh environment; SINGLE-CRYSTALS; TRANSPARENT; GROWTH; POWER; EDGE;

D O I：

10.1021/acsami.9b20499

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

For the first time, we report the successful fabrication of well-behaved field-effect transistors based on Nb-doped beta-Ga2O3 nanobelts mechanically exfoliated from bulk single crystals. The exfoliated beta-Ga2O3 nanobelts were transferred onto a purified surface of the 110 nm SiO2/Si substrate. These Nb-doped devices showed excellent electrical performance such as an ultrasmall cutoff current of similar to 10 fA, a high current on/off ratio of >10(8), and a quite steep subthreshold swing (SS, similar to 120 mV/decade). Furthermore, we investigated the temperature dependence down to 200 K, providing insightful information for its operation in a harsh environment. This work lays a foundation for wider application of Nb-doped beta-Ga2O3 in nano-electronics.

引用

页码：8437 / 8445

页数：9

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