Use of 4H-SiC-based Diodes as Temperature Sensors

被引：0

作者：

Della Corte, F. G. ^{[1
]}

Pangallo, G. ^{[1
]}

Rao, S. ^{[1
]}

Carotenuto, R. ^{[1
]}

Iero, D. ^{[1
]}

Merenda, M. ^{[1
]}

Pezzimenti, F. ^{[1
]}

机构：

[1] Mediterranea Univ, DIIES, Reggio Di Calabria, Italy

来源：

2019 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS 2019), 42ND EDITION | 2019年

关键词：

4H-SiC; sensors; temperature; linearity;

D O I：

10.1109/smicnd.2019.8923696

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The use of 4H-SiC junction devices as effective temperature sensors is demonstrated by measuring, elaborating and comparing the experimental IV characteristics of three different devices, namely pin and Schottky diodes and the body diode of a commercial power MOSFET. Due to the strong dependence of the I-V characteristics on temperature, the sensor performs a high sensitivity. It is shown that the correct choice of the probe current during sensing is fundamental to obtain an excellent linearity with T in the sensor response.

引用

页码：71 / 74

页数：4

共 10 条

[1] CMOS-compatible temperature sensor with digital output for wide temperature range applications
Bianchi, RA
Karam, JM
Courtois, B
Nadal, R
Pressecq, F
Sifflet, S
[J]. MICROELECTRONICS JOURNAL, 2000, 31 (9-10) : 803 - 810
[2] De Martino G, 2018, CAS 2018 PROCEEDINGS: 2018 INTERNATIONAL SEMICONDUCTOR CONFERENCE, P147, DOI 10.1109/SMICND.2018.8539744
[3] Numerical Simulation Study of a Low Breakdown Voltage 4H-SiC MOSFET for Photovoltaic Module-Level Applications
Della Corte, Francesco G.
De Martino, Giuseppe
Pezzimenti, Fortunato
Adinolfi, Giovanna
Graditi, Giorgio
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 65 (08) : 3352 - 3360
[4] Silicon diode temperature sensors-A review of applications
Mansoor, Mohtashim
Haneef, Ibraheem
Akhtar, Suhail
De Luca, Andrea
Udrea, Florin
[J]. SENSORS AND ACTUATORS A-PHYSICAL, 2015, 232 : 63 - 74
[5] Analysis of different forward current-voltage behaviours of Al implanted 4H-SiC vertical p-i-n diodes
Megherbi, M. L.
Pezzimenti, F.
Dehimi, L.
Rao, S.
Della Corte, F. G.
[J]. SOLID-STATE ELECTRONICS, 2015, 109 : 12 - 16
[6] Extraction of the Schottky barrier height of Ti/Al contacts on 4H-SiC from I-V and C-V measurements
Moscatelli, F
Scorzoni, J
Poggi, A
Cardinali, GC
Nipoti, R
[J]. SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2, 2004, 457-460 : 993 - 996
[7] Al+ Implanted 4H-SiC p+-i-n Diodes: Forward Current Negative Temperature Coefficient
Nipoti, Roberta
Moscatelli, Francesco
De Nicola, Pietro
[J]. IEEE ELECTRON DEVICE LETTERS, 2013, 34 (08) : 966 - 968
[8] A CMOS smart temperature sensor with a 3σ inaccuracy of ±0.1°C from -55°C to 125°C
Pertijs, MAP
Makinwa, KAA
Huijsing, JH
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2005, 40 (12) : 2805 - 2815
[9] 4H-SiC p-i-n diode as Highly Linear Temperature Sensor
Rao, Sandro
Pangallo, Giovanni
Della Corte, Francesco G.
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2016, 63 (01) : 414 - 418
[10] High-Performance Temperature Sensor Based on 4H-SiC Schottky Diodes
Rao, Sandro
Pangallo, Giovanni
Pezzimenti, Fortunato
Della Corte, Francesco G.
[J]. IEEE ELECTRON DEVICE LETTERS, 2015, 36 (07) : 720 - 722

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