Implicit-explicit multistep finite element-mixed finite element methods for the transient behavior of a semiconductor device

被引：4
|
作者：
Chen, W
机构：
[1] Chinese Acad Sci, Acad Math & Syst Sci, Beijing 100080, Peoples R China
[2] Shandong Univ, Sch Econ, Jinan 250100, Peoples R China
来源：
ACTA MATHEMATICA SCIENTIA | 2003年 / 23卷 / 03期
关键词：
semiconductor device; strongly A(0)-stable; multistep methods; finite element methods; mixed finite element methods;
D O I：
10.1016/S0252-9602(17)30347-8
中图分类号：
O1 [数学];
学科分类号：
0701 ; 070101 ;
摘要：
The transient behavior of a semiconductor device consists of a Poisson equation for the electric potential and of two nonlinear parabolic equations for the electron density and hole density. The electric potential equation is discretized by a mixed finite element method.. The electron and hole density equations axe treated by implicit-explicit multistep finite element methods. The schemes axe very efficient. The optimal order error estimates both in time and space are derived.
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页码：386 / 398
页数：13
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