Determination of band diagram for a p-n junction between Mott insulator LaMnO3 and band insulator Nb:SrTiO3

被引：16

作者：

Kitamura, M. ^{[1
,2
]}

Kobayashi, M. ^{[2
]}

Sakai, E. ^{[2
]}

Takahashi, R. ^{[3
]}

Lippmaa, M. ^{[3
]}

Horiba, K. ^{[2
]}

Fujioka, H. ^{[1
]}

Kumigashira, H. ^{[2
]}

机构：

[1] Univ Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1538505, Japan

[2] High Energy Accelerator Res Org KEK, Inst Mat Struct Sci, Photon Factory, Tsukuba, Ibaraki 3050801, Japan

[3] Univ Tokyo, Insutitute Solid State Phys, Kashiwa, Chiba 2278581, Japan

来源：

APPLIED PHYSICS LETTERS | 2015年 / 106卷 / 06期

基金：

日本学术振兴会;

关键词：

CHARGE; TRANSITION; INTERFACE;

D O I：

10.1063/1.4908570

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors report on the band diagram of epitaxial p-n junctions between the Mott insulator with "p-type carriers" LaMnO3 and the n-type semiconductor Nb-doped SrTiO3 (Nb: STO) using x-ray photoemission spectroscopy. By changing the donor concentration in Nb: STO from 0.1 at.% to 1.0 at. %, the value of the built-in potential for the Nb: STO side (V-bn) is reduced from 0.55 +/- 0.05 eV to 0.25 +/- 0.05 eV. The modulation of Vbn is well described in the framework of the conventional p-n junction model. These results suggest that the characteristics of perovskite oxide p-n junctions can be predicted and designed using the transport properties of the constituent oxides, irrespective of their strongly correlated electronic nature. (C) 2015 AIP Publishing LLC.

引用

页数：5

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