Improved performance of amorphous silicon thin film transistors by cyanide treatment

被引：4

作者：

Aiyer, HN

Nishioka, D

Matsuki, N

Shinno, H

Perera, VPS

Chikyow, T

Kobayashi, H

Koinuma, H

机构：

[1] Tokyo Inst Technol, Ceram Mat & Struct Lab, Midori Ku, Yokohama, Kanagawa 226, Japan

[2] Natl Res Inst Met, Tsukuba, Ibaraki 3050047, Japan

[3] Osaka Univ, Inst Sci & Ind Res, Osaka 5670047, Japan

[4] Osaka Univ, Res Ctr Photoenerget Organ Mat, Osaka 5670047, Japan

[5] Tokyo Inst Technol, Frontier Collaborat Res Ctr, Midori Ku, Yokohama, Kanagawa 2268503, Japan

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 06期

关键词：

D O I：

10.1063/1.1344230

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have examined the impact of a simple, wet chemical postgrowth treatment of "immersing in KCN solution" on the performance of inverted staggered amorphous silicon n-channel thin film transistors. Results show that the cyanide treatment significantly improves the overall transistor performance by the elimination of defect states. (C) 2001 American Institute of Physics.

引用

页码：751 / 753

页数：3

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[4]

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