MBE growth of low-threshold long-wavelength QD lasers on GaAs substrates

被引：0

作者：

Maleev, NA ^{[1
]}

Kovsh, AR ^{[1
]}

Zhukov, AE ^{[1
]}

Mikhrin, SS ^{[1
]}

Vasilev, AP ^{[1
]}

Semenova, ES ^{[1
]}

Shernyakov, YM ^{[1
]}

Nikitina, EV ^{[1
]}

Kryjanovskaya, NV ^{[1
]}

Sizov, DS ^{[1
]}

Soshnikov, IP ^{[1
]}

Maximov, MV ^{[1
]}

Ledentsov, NN ^{[1
]}

Ustinov, VM ^{[1
]}

Bimberg, D ^{[1
]}

Alferov, ZI ^{[1
]}

机构：

[1] Ioffe Phys Tech Inst, St Petersburg, Russia

来源：

10TH INTERNATIONAL SYMPOSIUM ON NANOSTRUCTURES: PHYSICS AND TECHNOLOGY | 2003年 / 5023卷

关键词：

quantum dot; long-wavelength lasers; molecular-beam epitaxy;

D O I：

10.1117/12.514327

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Recent results on molecular-beam epitaxy growth of the quantum dot InGaAs/GaAs heterostructures for long-wavelength lasers-on GaAs substrates are presented. As a result of optimization of the growth procedure for active region and emitter layers low-threshold current density (45-80 A/cm(2)) long-wavelength (1.27-1.3 mum) laser diodes may be fabricated with high reproducibility.

引用

页码：357 / 360

页数：4

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