In2O3- and SnO2-Based Thin Film Ozone Sensors: Fundamentals

被引：56
|
作者：
Korotcenkov, G. [1 ]
Brinzari, V. [2 ]
Cho, B. K. [1 ]
机构：
[1] Gwangju Inst Sci & Technol, Gwangju 500712, South Korea
[2] State Univ Moldova, Kishinev 2009, Moldova
来源：
JOURNAL OF SENSORS | 2016年 / 2016卷
关键词：
SEMICONDUCTOR GAS SENSOR; INDIUM OXIDE-FILMS; HYDROXYLATED TIO2 SURFACES; TIN DIOXIDE SURFACE; SOL-GEL PROCESS; SENSING PROPERTIES; ROOM-TEMPERATURE; SPRAY-PYROLYSIS; SNO2; FILMS; GRAIN-SIZE;
D O I：
10.1155/2016/3816094
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The paper considers SnO2 and In2O3 thin films as materials for the design of solid-state conductometric ozone sensors in depth. In particular, the present review covers the analysis of the fundamentals of SnO2- and In2O3-based conductometric ozone sensor operation. The main focus is on the description of mechanisms of ozone interaction with metal oxides, the influence of air humidity on sensor response, and processes that control the kinetics of sensor response to ozone.
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页数：31
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