Measurements of the density-dependent many-body electron mass in two dimensional GaAs/AlGaAs heterostructures

被引：107
作者：
Tan, YW
Zhu, J
Stormer, HL
Pfeiffer, LN
Baldwin, KW
West, KW
机构：
[1] Columbia Univ, Dept Phys, New York, NY 10027 USA
[2] Columbia Univ, Dept Appl Phys & Appl Math, New York, NY 10027 USA
[3] Lucent Technol, Bell Labs, Murray Hill, NJ 07974 USA
来源：
PHYSICAL REVIEW LETTERS | 2005年 / 94卷 / 01期
关键词：
D O I：
10.1103/PhysRevLett.94.016405
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We determine the density-dependent electron mass m(*) in two-dimensional electron systems of GaAs/AlGaAs heterostructures by performing detailed low-temperature Shubnikov-de Haas measurements. Using very high-quality transistors with tunable electron densities we measure m(*) in single, high mobility specimens over a wide range of r(s) (6 to 0.8). Toward low densities we observe a rapid increase of m(*) by as much as 40%. For 2>r(s)>0.8 the mass values fall similar to10% below the band mass of GaAs. Numerical calculations are in qualitative agreement with our data but differ considerably in detail.
引用
收藏
页数：4
相关论文
共 25 条
[1]  
ASGARI R, IN PRESS PHYS REV B
[2]   Evidence from the surface morphology for nonlinear growth of epitaxial GaAs films [J].
Ballestad, A ;
Ruck, BJ ;
Adamcyk, M ;
Pinnington, T ;
Tiedje, T .
PHYSICAL REVIEW LETTERS, 2001, 86 (11) :2377-2380
[3]   Giant low temperature heat capacity of GaAs quantum wells near Landau level filling nu=1 [J].
Bayot, V ;
Grivei, E ;
Melinte, S ;
Santos, MB ;
Shayegan, M .
PHYSICAL REVIEW LETTERS, 1996, 76 (24) :4584-4587
[4]   Chemical potential oscillations and de Haas-van Alphen effect [J].
Champel, T .
PHYSICAL REVIEW B, 2001, 64 (05)
[5]   Effective masses in high-mobility 2D electron gas structures [J].
Coleridge, PT ;
Hayne, M ;
Zawadzki, P ;
Sachrajda, AS .
SURFACE SCIENCE, 1996, 361 (1-3) :560-563
[6]   Temperature-dependent effective-mass renormalization in two-dimensional electron systems [J].
Das Sarma, S ;
Galitski, VM ;
Zhang, Y .
PHYSICAL REVIEW B, 2004, 69 (12)
[7]   BAND NONPARABOLICITY EFFECTS ON WEAK COUPLING POLARONS IN COMPOUND SEMICONDUCTORS [J].
DASSARMA, S ;
MASON, BA .
PHYSICAL REVIEW B, 1985, 31 (02) :1177-1180
[8]   EFFECTIVE MASS AND COLLISION TIME OF (100) SI SURFACE ELECTRONS [J].
FANG, FF ;
FOWLER, AB ;
HARTSTEIN, A .
PHYSICAL REVIEW B, 1977, 16 (10) :4446-4454
[9]  
GRIGORIEV P, 2001, SOV PHYS JETP, V92, P1090
[10]   Numerical model of quantum oscillations in quasi-two-dimensional organic metals in high magnetic fields [J].
Harrison, N ;
Bogaerts, R ;
Reinders, PHP ;
Singleton, J ;
Blundell, SJ ;
Herlach, F .
PHYSICAL REVIEW B, 1996, 54 (14) :9977-9987
123