Thickness and stoichiometry dependence of the thermal conductivity of GeSbTe films

被引：115

作者：

Reifenberg, John P. ^{[1
]}

Panzer, Matthew A.

Kim, SangBum

Gibby, Aaron M.

Zhang, Yuan

Wong, Simon

Wong, H.-S. Philip

Pop, Eric

Goodson, Kenneth E.

机构：

[1] Stanford Univ, Dept Mech Engn, Stanford, CA 94305 USA

[2] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA

[3] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA

[4] Stanford Univ, Dept Mech Engn, Microscale Heat Transfer Lab, Stanford, CA 94305 USA

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 11期

关键词：

D O I：

10.1063/1.2784169

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thermal conduction in GeSbTe films strongly influences the writing energy and time for phase change memory (PCM) technology. This study measures the thermal conductivity of Ge2Sb2Te5 between 25 and 340 degrees C for layers with thicknesses near 60, 120, and 350 nm. A strong thickness dependence of the thermal conductivity is attributed to a combination of thermal boundary resistance (TBR) and microstructural imperfections. Stoichiometric variations significantly alter the phase transition temperatures but do not strongly impact the thermal conductivity at a given temperature. This work makes progress on extracting the TBR for Ge2Sb2Te5 films, which is a critical unknown parameter for PCM simulations.

引用

页数：3

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