Chemical vapor deposition of tantalum nitride films for metal gate application using TBTDET and novel single-source MOCVD precursors

被引：8

作者：

Lemberger, M.

Baunemann, A.

Bauer, A. J.

机构：

[1] Univ Erlangen Nurnberg, Chair Elect Devices, D-91058 Erlangen, Germany

[2] Ruhr Univ Bochum, Chair Inorgan Chem 2, D-44801 Bochum, Germany

[3] Fraunhofer Inst Integrat Syst & Device Technol, D-91058 Erlangen, Germany

来源：

MICROELECTRONICS RELIABILITY | 2007年 / 47卷 / 4-5期

关键词：

D O I：

10.1016/j.microrel.2007.01.032

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, physical and electrical properties of TaN films used as metal electrodes in MOS structures are discussed. TaN films were deposited by MOCVD from commercial TBTDET and two novel mixed amido/imido/guanidinato and mixed amido/imido/hydrazido precursors. It will be shown that morphology (only films deposited from the guanidinato compound above 750 degrees C showed cubic TaN phase while all other films were amorphous) and O content (5 at.%,, and 25 at.% in case of guanidinato and in case of TBTDET precursor, respectively) do not necessary predetermine resistivity. Lowest resistivity (230 mu Omega em) was obtained for TBTDET. Evaluated values of metal work function are 4.4-4.6 eV (TBTDET) and 3.9 eV (guanidinato compound). Films deposited from the hydrazido compound reveal bad electrical properties (e.g., metal layers behave dielectric-like). (C) 2007 Elsevier Ltd. All rights reserved.

引用

页码：635 / 639

页数：5

共 50 条

[31] Comparative study of the metal organic chemical vapor deposition of beta-CoGa thin films from dialkylgallium tetracarbonylcobaltate single-source precursors
Fischer, RA
Miehr, A
CHEMISTRY OF MATERIALS, 1996, 8 (02) : 497 - 508
[32] Chemical vapor deposition of metal oxide thin films and new single-source precursor design for oxynitride films.
Lentz, LM
Schaller, DJ
Randhawa, M
Vohs, JK
Fahlman, BD
ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2005, 229 : U1069 - U1069
[33] Metal-organic chemical vapor deposition of β-In2S3 thin films using a single-source approach
M. Afzaal
D. Crouch
P. O'Brien
Jin-Ho Park
Journal of Materials Science: Materials in Electronics, 2003, 14 : 555 - 557
[34] Metal-organic chemical vapor deposition of β-In2S3 thin films using a single-source approach
Afzaal, M
Crouch, D
O'Brien, P
Park, JH
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2003, 14 (09) : 555 - 557
[35] PHOSPHINOCHALCOGENOIC AMIDATO COMPLEXES OF ZINC AND CADMIUM AS NOVEL SINGLE-SOURCE PRECURSORS FOR THE DEPOSITION OF METAL SELENIDE AND TELLURIDE FILMS
BWEMBYA, GC
SONG, XJ
BOCHMANN, M
CHEMICAL VAPOR DEPOSITION, 1995, 1 (03) : 78 - &
[36] GROWTH OF ZNO BY MOCVD USING ALKYLZINC ALKOXIDES AS SINGLE-SOURCE PRECURSORS
AULD, J
HOULTON, DJ
JONES, AC
RUSHWORTH, SA
MALIK, MA
OBRIEN, P
CRITCHLOW, GW
JOURNAL OF MATERIALS CHEMISTRY, 1994, 4 (08) : 1249 - 1253
[37] Organotin Dithiocarbamates: Single-Source Precursors for Tin Sulfide Thin Films by Aerosol-Assisted Chemical Vapor Deposition (AACVD)
Ramasamy, Karthik
Kuznetsov, Vladimir L.
Gopal, Kandasamy
Malik, Mohammad A.
Raftery, James
Edwards, Peter P.
O'Brien, Paul
CHEMISTRY OF MATERIALS, 2013, 25 (03) : 266 - 276
[38] Precursors for the chemical vapor deposition of titanium nitride and titanium aluminum nitride films
Winter, CH
McKarns, PJ
Scheper, JT
CHEMICAL ASPECTS OF ELECTRONIC CERAMICS PROCESSING, 1998, 495 : 95 - 106
[39] ORGANOMETALLIC CHEMICAL-VAPOR-DEPOSITION OF TRANSITION-METAL CARBIDES FROM SINGLE-SOURCE PRECURSORS - THE USE OF HOMOLEPTIC ALKYLS
HEALY, MD
SMITH, DC
RUBIANO, RR
SPRINGER, RW
ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1994, 207 : 189 - INOR
[40] Single-source precursor to titanium nitride thin films. Evidence for the intermediacy of imido complexes in the chemical vapor deposition process
Winter, Charles H.
Sheridan, Philip H.
Lewkebandara, T. Suren
Heeg, Mary Jane
Proscia, James W.
Journal of the American Chemical Society, 1992, 114 (03)

← 1 2 3 4 5 →