Electrically excited infrared emission from InN nanowire transistors

被引：39

作者：

Chen, Jia ^{[1
]}

Cheng, Guosheng

Stern, Eric

Reed, Mark A.

Avouris, Phaedon

机构：

[1] IBM Corp, TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA

[2] Yale Univ, Dept Elect Engn, New Haven, CT 06520 USA

[3] Yale Univ, Dept Biomed Engn, New Haven, CT 06520 USA

[4] Yale Univ, Dept Appl Phys, New Haven, CT 06520 USA

来源：

NANO LETTERS | 2007年 / 7卷 / 08期

关键词：

D O I：

10.1021/nl070852y

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We report electrically excited infrared emission from a single InN nanowire transistor. We report on: (1) the generation of IR emission by impact excitation of carriers under a high electrical field, (2) the size of the fundamental band gap of InN NW by measuring its emission spectra, (3) the observation of interband and conduction-band to conduction-band hot-carrier emission, and the carrier relaxation rate, and finally, (4) we present evidence that suggests that the electron accumulation layer at the InN NW surface forms a surface plasmon that couples to and enhances radiative electron-hole pair recombination.

引用

页码：2276 / 2280

页数：5

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