The Gate All Around (GAA) MOSFET is considered as one of the most promising devices for downscaling below 50 nm. By surrounding the channel completely, the gate gains increased electrostatic control of the channel and short-channel-effects (SCEs) can be drastically suppressed. However, challenges still remain to resolve the important issues particularly concerning hot-carrier reliability and accurate device models for nanoscale circuit designs. Hot-carrier effects have been the major issues in the long-term stability of subthreshold performances in a nanoscale MOS transistor. In this paper we present a two-dimensional analytical analysis of the subthreshold behavior, subthreshold current and subthreshold swing, including the interfacial hot-carrier effects. The calculated results of the proposed approach match well with those of the 2-D numerical device simulator. The present work provides valuable design insights in the performance of nanoscale CMOS-based devices including hot-carrier degradation effects.
机构:
Indian Inst Technol, Dept Elect Engn, Madras 600036, Tamil Nadu, India
Arizona State Univ, Tempe, AZ 85287 USAIndian Inst Technol, Dept Elect Engn, Madras 600036, Tamil Nadu, India
Dey, Aritra
;
Chakravorty, Anjan
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Indian Inst Technol, Dept Elect Engn, Madras 600036, Tamil Nadu, IndiaIndian Inst Technol, Dept Elect Engn, Madras 600036, Tamil Nadu, India
Chakravorty, Anjan
;
DasGupta, Nandita
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Indian Inst Technol, Dept Elect Engn, Madras 600036, Tamil Nadu, IndiaIndian Inst Technol, Dept Elect Engn, Madras 600036, Tamil Nadu, India
DasGupta, Nandita
;
DasGupta, Amitava
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Indian Inst Technol, Dept Elect Engn, Madras 600036, Tamil Nadu, IndiaIndian Inst Technol, Dept Elect Engn, Madras 600036, Tamil Nadu, India
机构:
Indian Inst Technol, Dept Elect Engn, Madras 600036, Tamil Nadu, India
Arizona State Univ, Tempe, AZ 85287 USAIndian Inst Technol, Dept Elect Engn, Madras 600036, Tamil Nadu, India
Dey, Aritra
;
Chakravorty, Anjan
论文数: 0引用数: 0
h-index: 0
机构:
Indian Inst Technol, Dept Elect Engn, Madras 600036, Tamil Nadu, IndiaIndian Inst Technol, Dept Elect Engn, Madras 600036, Tamil Nadu, India
Chakravorty, Anjan
;
DasGupta, Nandita
论文数: 0引用数: 0
h-index: 0
机构:
Indian Inst Technol, Dept Elect Engn, Madras 600036, Tamil Nadu, IndiaIndian Inst Technol, Dept Elect Engn, Madras 600036, Tamil Nadu, India
DasGupta, Nandita
;
DasGupta, Amitava
论文数: 0引用数: 0
h-index: 0
机构:
Indian Inst Technol, Dept Elect Engn, Madras 600036, Tamil Nadu, IndiaIndian Inst Technol, Dept Elect Engn, Madras 600036, Tamil Nadu, India